Abstract
The synthesis of II-VI semiconductor nanocrystals doped with transition metal ions is particularly difficult. In the case of manganese doped CdSe nanocrystals produced via chemical route it is necessary to achieve small incorporation of manganese ions. The incorporation of manganese ions in CdSe nanocrystals has been confirmed by the study of Energy Dispersive Spectroscopy, Photoluminescence and Electron Paramagnetic Resonance spectra. The CdSe nanocrystals have cubic structure, the average crystallite size lies between 3-6 nm and increases with the variation of doping concentration of Mn2+ ions as characterized by X-ray diffraction. The structural properties of CdSe semiconductor nanocrystals are also studied by High Resolution Transmission Electron Microscopy, Scanning Electron Microscopy and UV- Visible Absorption Spectroscopy. The energy band gaps have been determined by UV/V is absorption study with the help of Tauc plot and are 2.54 eV, 2.27 eV and 2.24 eV as concentration of Mn2+ions in CdSe semiconductor nanocrystals increases from 0% to 0.75%. The crystallite size is also obtained from the UV-Visible absorption study; this varies from 1.69 to 1.78 nm with increase of Mn2+ concentration from 0% to 0.75% which is in agreement with X-ray diffraction result. Further, the magnetic and electronic properties of Mn2+ doped CdSe nanocrystals are studied using EPR spectra and the values of g factor, second-rank axial zero-field splitting parameter D and hyperfine parameter A are calculated. EPR measurements reveal that the dopant ions are incorporated in CdSe semiconductor nanocrystals.
Author Contributions
Copyright© 2023
Mani Tripathi Upendra, et al.
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Introduction
Manganese ion (Mn2+) doped semiconductor nanocrystals (NCs) based on group II/VI compounds can maintain approximately all the intrinsic advantages of NCs, and also possess the additional merits such as larger Stokes shifts, enhanced thermal and chemical stabilities as well as longer excited state life time, which suggest their exciting and interesting applications in the design and fabrication of nanoscale optoelectronic devices such as solar cells and organic light emitting diodes (OLEDs) Electron paramagnetic resonance (EPR) is a spectroscopic technique used to obtain magnetic and electronic properties of transition metal ions doped semiconductor NCs. EPR has been used as an investigative tool for the study of transition metal ions and radicals in solid materials to obtain information about the symmetry of the crystalline electric field and the associated distortion in the lattice Covalent organic frameworks due to their excellent characteristic properties have attracted attention of researchers Different industries are the main reasons for different kinds of pollution, such as water, soil, and air. Three aspects of removing and degrading different watersoluble organic dyes have been discussed The exciting and interesting applications discussed above motivated us to investigate Mn2+ doped CdSe semiconductor NCs. In the present work, we have investigated the morphological and size and shape dependent optical and luminescence properties of undoped and Mn2+ doped CdSe semiconductor NCs synthesized via chemical route. We have also studied the effect of doping with different concentration of Mn2+ ions in CdSe NCs. The sample characterization is carried out using X-ray diffraction (XRD), High Resolution-Transmission Electron Microscopy (HR-TEM), Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) analysis, UV-Visible spectroscopy, Photo Luminescence (PL) and Electron Paramagnetic Resonance (EPR) techniques. The purpose is to know the change of behaviour with the change in concentration of Mn2+ ions in CdSe NCs. The results show that the materials studied are better candidate of optoelectronic devices. like emitter for colour display, optical fiber amplifier, chemical sensor and low threshold laser.
Results
where D is the crystallite size, βhkl is the full - width at half - maximum (FWHM) of the diffraction peak measured in radian, λ (1.54 Å) is the wavelength of X-ray CuKα1 radiation, and θ is the angle of diffraction. Lattice constant of all cubic CdSe NC samples were calculated by using formula where, ???? is lattice constant, h, k, l are Miller indices and d is the interplanar spacing which was calculated using Bragg’s formula: where, θ is the angle between the incident beam and the reflection lattice planes, n = 1 for first order. Corresponding to the planes (111), (220), (311) and (331), the calculated values of d- spacing, lattice constant ???? and crystallite size for cubic phase 0%, 0.25% and 0.75% Mn2+ doped CdSe NCs are given in Furthermore, with powder, the peak broadening is due to a linear combination of the contribution from nanocrystalline nature and local strain in the crystal structure from defects The strain ε and crystallite size D of the Mn2+ doped CdSe NCs were estimated by Williamson – Hall (W – H) method In (i) there may be more than one crystallite in single grain; (ii)there may be some agglomeration of the particles HRTEM micrographs of undoped and Mn2+ doped CdSe NCs are given in Scanning electron microscopy (SEM) is a versatile technique to study morphology of nanomaterials The Energy Dispersive Spectrometer (EDS) analysis can be used to determine the composition of a specimen as a whole as well as the composition of individual components The UV/V is absorption spectra for both undoped and Mn2+ doped CdSe NCs are shown in where A is a constant, Eg is the energy band gap of the materials, h is the Planck’s constant, ν is the frequency and exponent n depends on the type of transition. For direct allowed transition n = 1/2, for indirect allowed transition n = 2, for direct forbidden transition n = 3/2 and for forbidden indirect transition n = 3 The UV/V is absorption spectra for both undoped and Mn2+doped CdSe NCs show blue shift of ~0.6 eV as compared to the absorption edge (1.74 eV) for bulk CdSe at 300 K Furthermore, for strong confinement, in which NC diameter D is smaller than the exciton Bohr radius where the first two terms are the kinetic energy of an electron and a hole, the third and fourth terms represent the confinement potential energies and finally, the last term represents the Coulomb electron-hole interaction. The Eigen values of Hamiltonian in Eq. (13) yield the following expression for band gap energy of NC (the 1s - 1s excited state energy) where 0.25% and 0.75% Mn2+ doped CdSe NCs show well-resolved X-band EPR spectra where ????B is the Bohr magneton, B is the applied magnetic field, S and I are the electron and nuclear spin operators The Mn2+ doped CdSe NCs contain various types of disorders and differences in surface passivation of each crystal. The EPR detects average of all the above properties. The values of ????, A and D parameters for Mn2+ doped CdSe NCs obtained from EPR spectra are given in spectra all the samples provide sextet splitting. The peak-to-peak line widths of EPR lines are about 66 G for 0.25% Mn2+ and 76 G for 0.75% Mn2+ from which we conclude that the Mn2+ ions are incorporated within the CdSe and not on the surface of CdSe NCs
25.375
3.51
6.0795
25.36
3.5079
6.0759
0.049956
2.84
0.042421
3.35
0.043469
3.27
42.044
2.149
6.0783
42.28
2.1350
6.0388
0.053294
2.79
0.023797
6.24
0.025356
5.86
49.741
1.833
6.0794
49.60
1.8357
6.0885
0.038204
3.99
0.029801
5.12
0.024902
6.13
67.142
1.3941
6.0767
67.18
1.3918
6.0666
---
---
---
---
---
---
3.21
4.91
5.09
3.8044
3.6456
3.6576
2.3504
2.2354
2.2084
1.9889
1.9152
1.8648
9.78
34.05
8.12
17.24
8.37
35.27
0.00
0.00
1.06
8.86
5.48
18.23
90.22
65.95
90.82
73.90
86.15
46.50
1.991
61.70
31.69
1.978
70.05
33.36
Conclusion
The synthesis of Mn2+ doped CdSe NCs by the chemical route without using any external capping agent and their structural and optical characterization have been reported. The NC size was confirmed by XRD, HRTEM. SEM and UV/Vis analysis. Spectroscopic results shows that the absorption peaks are blue shifted from the absorption edge of the bulk. The band gaps of all the samples are found to increase as compared to bulk CdSe which may be attributed to quantum confinement. EDS, PL and EPR spectra confirm the doping of Mn2+ ions in CdSe NCs. The PL spectra show distinctive dual colour emissions nearly at 380 nm and 465 nm for CdSe host and Mn2+ ions doped in CdSe NCs. From EPR study it is seen that the values of the hyperfine parameter A, the second-order axial zero-field splitting parameter D and the electron spectroscopic splitting factor gdecrease as Mn2+ concentration increases in CdSe NCs. On the basis of results the materials studied here are better candidate of optoelectronic devices. like emitter for colour display, optical fiber amplifier, chemical sensor and low threshold laser.